SGH80N60UFD - (G80N60UFD) TO-3P 80A 600V 195W IGBT Transistor

SGH80N60UFD - (G80N60UFD) TO-3P 80A 600V 195W IGBT Transistor

SGH80N60UFD - (G80N60UFD) TO-3P 80A 600V 195W IGBT Transistor Description

SGH80N60UFD - (G80N60UFD) TO-3P 80A 600V 195W IGBT Transistör is a high-performance semiconductor device engineered to meet the rigorous demands of modern power electronics. With its robust design and high efficiency, this IGBT transistor is crucial for applications requiring high current and voltage capabilities, making it indispensable in the industrial and consumer electronics sectors.

SGH80N60UFD - (G80N60UFD) TO-3P 80A 600V 195W IGBT Transistor Features

• High Current Capacity: Handles up to 80A, ensuring robust performance in demanding applications.
• Voltage Rating: Operates efficiently at 600V, suitable for high-voltage applications.
• Power Dissipation: Supports up to 195W, providing excellent thermal performance.
• Package Type: Encased in a TO-3P package, offering enhanced thermal management and reliability.
• Switching Speed: Fast switching capabilities for efficient power conversion.
• Low Saturation Voltage: Minimizes power loss and maximizes efficiency.
• Robust Construction: Designed to withstand harsh operating environments.

SGH80N60UFD - (G80N60UFD) TO-3P 80A 600V 195W IGBT Transistor Applications

• Electric Vehicles: Integral in the power management systems of electric and hybrid vehicles.
• Industrial Motor Drives: Used in motor control applications for efficient energy conversion.
• Renewable Energy Systems: Essential in solar inverters and wind turbine converters for clean energy generation.