SGH80N60UF - (G80N60UF) TO-3P 80A 600V 195W IGBT Transistor

SGH80N60UF - (G80N60UF) TO-3P 80A 600V 195W IGBT Transistor

SGH80N60UF - (G80N60UF) TO-3P 80A 600V 195W IGBT Transistor Description

SGH80N60UF - (G80N60UF) TO-3P 80A 600V 195W IGBT Transistor is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for maximum efficiency and reliability in power conversion applications. With its robust TO-3P package, this device is ideal for high-current environments, delivering up to 80A at 600V. It is engineered to meet the demands of modern electrical systems, making it an essential component for professionals in the power electronics industry.

SGH80N60UF - (G80N60UF) TO-3P 80A 600V 195W IGBT Transistor Features

• High Current Rating: Supports up to 80A for robust power handling.
• Voltage Capacity: Operates efficiently at a maximum of 600V.
• Power Dissipation: Features a power dissipation of 195W, ensuring stable performance under load.
• Low Saturation Voltage: Minimizes conduction losses for improved efficiency.
• Fast Switching Speed: Optimized for high-frequency applications.
• Enhanced Thermal Management: TO-3P package facilitates superior heat dissipation.
• Durable Construction: Built to withstand demanding industrial conditions.

SGH80N60UF - (G80N60UF) TO-3P 80A 600V 195W IGBT Transistor Applications

• Industrial Motor Drives: Used in variable frequency drives for high-efficiency motor control.
• Renewable Energy Systems: Essential for inverters in solar and wind power installations.
• Power Supply Units: Crucial for designing efficient DC/AC converters in industrial power supplies.