IRGB10B60KD is a high-performance Insulated Gate Bipolar Transistor (IGBT) housed in a robust TO-220 package. Designed to handle high power and voltage levels, this component is ideal for demanding applications requiring efficiency and reliability. With a continuous current capacity of 22A and a voltage rating of 600V, it ensures optimal performance in high-power circuits while maintaining a power dissipation of 156W. This makes it a critical component in modern power electronics, bridging the gap between high-speed performance and thermal management.
IRGB10B60KD TO-220 22A 600V 156W IGBT Transistor Features
- Maximum Collector-Emitter Voltage (VCE): 600V
- Continuous Collector Current (IC): 22A
- Power Dissipation (PD): 156W
- Switching Frequency: [Frequency]
- Gate-Emitter Voltage (VGE): [Voltage]
- Thermal Resistance: [Resistance]
- Operating Junction Temperature: [Temperature]
IRGB10B60KD TO-220 22A 600V 156W IGBT Transistor Applications
- Motor Drives: Enhances performance in industrial motor control systems by offering reliable and efficient power conversion.
- Inverters: Ideal for converting DC to AC in solar power systems, ensuring high efficiency and robustness.
- Switch Mode Power Supplies (SMPS): Essential for optimizing energy efficiency in high-frequency power conversion applications.
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