IKW40N120T2 - (K40T1202) TO-247-3 40A 1200V IGBT Transistör is a high-efficiency, high-voltage insulated-gate bipolar transistor designed for demanding power applications. Its robust design and advanced features make it indispensable in power electronics, providing reliable performance in applications needing efficient switching and energy conversion. This product is tailored for engineers seeking precision and durability in their power systems.
IKW40N120T2 - (K40T1202) TO-247-3 40A 1200V IGBT Transistor Features
- High Current Capability: Supports up to 40A for demanding applications.
- High Voltage Rating: Operates efficiently at 1200V, enabling use in high-voltage circuits.
- Low Switching Losses: Optimized for minimal energy waste, enhancing system efficiency.
- Robust Package: The TO-247-3 package ensures superior thermal management and reliability.
- Short Circuit Protection: Designed to withstand high stress without failure.
- Low Saturation Voltage: Reduces conduction losses, improving overall performance.
- Fast Switching Speed: Ideal for high-frequency applications, minimizing delay times.
IKW40N120T2 - (K40T1202) TO-247-3 40A 1200V IGBT Transistor Applications
- Inverter Systems: Essential for converting DC to AC in renewable energy systems such as solar inverters.
- Motor Drives: Used in industrial motor drive applications for efficient speed and torque control.
- Power Supplies: Integral in high-voltage power supply units, ensuring stable and efficient power conversion.