IKW25T120 - (K25T120) TO-247 50A 1200V IGBT Transistor is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed to meet the demanding requirements of modern power electronics. With its robust TO-247 package, this component is engineered to handle up to 50A of current at 1200V, making it an ideal choice for high-efficiency energy conversion systems and industrial applications. The IKW25T120 offers enhanced thermal performance and fast switching capabilities, crucial for minimizing energy loss and improving overall system efficiency.
IKW25T120 - (K25T120) TO-247 50A 1200V IGBT Transistor Features
- High Current Capability: Supports up to 50A for efficient power handling
- Voltage Rating: Operates at a maximum of 1200V for high-voltage applications
- TO-247 Package: Provides excellent thermal management and mechanical stability
- Fast Switching Speed: Reduces switching losses for improved efficiency
- Low On-State Voltage Drop: Minimizes conduction losses in power circuits
- Robust Construction: Ensures reliability in harsh industrial environments
- Optimized for High-Frequency Operation: Suitable for modern energy conversion systems
IKW25T120 - (K25T120) TO-247 50A 1200V IGBT Transistor Applications
- Industrial Motor Drives: Ideal for controlling the speed and torque of electric motors in industrial settings
- Renewable Energy Systems: Used in solar inverters and wind turbine converters for efficient energy conversion
- Power Supply Units: Suitable for high-voltage power supplies and uninterruptible power systems (UPS)
Register
Log In
Dealer Login
EN − TL
Türkçe
