IKW25N120H3 - (K25H1203) TO-247 50A 1200V 326W IGBT Transistör is a cutting-edge power semiconductor device designed for high-performance applications in the electronics industry. Ideal for engineers seeking superior efficiency and reliability, this IGBT transistor offers robust performance in demanding environments. Its advanced design and high current handling capability make it a preferred choice for power conversion and switching applications.
IKW25N120H3 - (K25H1203) TO-247 50A 1200V 326W IGBT Transistor Features
- High Voltage Rating: 1200V for excellent high-voltage performance
- Current Capacity: Supports 50A for high current applications
- Package Type: TO-247 ensures efficient thermal management
- Power Dissipation: Capable of dissipating up to 326W, enhancing reliability under load
- Switching Speed: Optimized for fast switching applications
- Low On-State Voltage Drop: Reduces power loss during operation
- Robust Design: Suitable for high-frequency switching
IKW25N120H3 - (K25H1203) TO-247 50A 1200V 326W IGBT Transistor Applications
- Inverter Systems: Ideal for use in industrial and solar inverters
- Motor Drives: Perfect for driving high-power motors in various industrial applications
- Power Supplies: Suitable for high-efficiency power supply design