IHW30N160R2 - (H30R1602) TO-247 30A 1600V 312W IGBT Transistor

IHW30N160R2 - (H30R1602) TO-247 30A 1600V 312W IGBT Transistor

IHW30N160R2 - (H30R1602) TO-247 30A 1600V 312W IGBT Transistor Description

IHW30N160R2 - (H30R1602) TO-247 30A 1600V 312W IGBT Transistör is a high-performance Insulated Gate Bipolar Transistor designed to revolutionize power management in industrial applications. With its robust design and high voltage capacity, it is pivotal in enhancing the efficiency and reliability of power electronic systems. Ideal for engineers and professionals, this component is a critical part of modern power systems, offering unmatched performance for demanding applications.

IHW30N160R2 - (H30R1602) TO-247 30A 1600V 312W IGBT Transistor Features

• High Voltage Capability: Supports up to 1600V, enabling use in high-voltage applications.
• High Current Rating: Capable of handling 30A continuous current, ideal for heavy-duty operations.
• Low On-State Voltage Drop: Ensures high efficiency and reduced power loss in the system.
• Robust TO-247 Package: Provides excellent thermal performance and enhanced durability.
• Fast Switching Speed: Facilitates efficient power conversion with minimal delay.
• Enhanced Thermal Management: Features optimized heat dissipation for prolonged device longevity.
• Wide Operating Temperature Range: Suitable for use in diverse environmental conditions.

IHW30N160R2 - (H30R1602) TO-247 30A 1600V 312W IGBT Transistor Applications

• Industrial Inverters: Essential for converting DC to AC in high-power industrial systems.
• Motor Drives: Enhances performance in electric motor control applications, providing smooth operation.
• Renewable Energy Systems: Integral in the conversion and management of solar and wind energy systems.