IGW30N100T - (G30T100) TO-247 60A 1000V 412W IGBT Transistor

IGW30N100T - (G30T100) TO-247 60A 1000V 412W IGBT Transistor

IGW30N100T - (G30T100) TO-247 60A 1000V 412W IGBT Transistor Description

IGW30N100T - (G30T100) TO-247 60A 1000V 412W IGBT Transistör is a high-performance insulated-gate bipolar transistor (IGBT) designed to meet the rigorous demands of modern electronic systems. With its robust 412W power capacity and 1000V voltage rating, this IGBT transistor is ideal for high-voltage applications, enabling efficient energy conversion in industrial and commercial settings. The IGW30N100T is widely recognized in the electronics industry for its reliability and efficiency, making it a top choice for engineers and professionals.

IGW30N100T - (G30T100) TO-247 60A 1000V 412W IGBT Transistor Features

• High Current Capacity: 60A continuous collector current for handling substantial power loads.
• Voltage Rating: 1000V ensures compatibility with high-voltage applications.
• Thermal Management: 412W maximum power dissipation for superior heat management.
• Package Type: TO-247 package offering excellent thermal and electrical performance.
• Switching Speed: Optimized for rapid switching to enhance efficiency in various applications.
• Low Saturation Voltage: Minimizes power loss and enhances device efficiency.
• Robust Construction: Designed to withstand harsh operating conditions and extend lifespan.

IGW30N100T - (G30T100) TO-247 60A 1000V 412W IGBT Transistor Applications

• Industrial Inverters: Ideal for converting DC to AC power in large-scale industrial applications.
• Motor Drives: Used in variable frequency drives to control motor speed and torque.
• Power Supplies: Essential for high-voltage power supply units in commercial and industrial settings.