STB75NF75 in a TO-263 package is a robust N-channel MOSFET designed to deliver superior performance for power electronics applications. With a high current capacity of 80A and a drain-source voltage of 75V, this MOSFET is engineered to handle demanding environments, making it ideal for high-power applications. Its high efficiency and low on-resistance of 0.011 Ohm ensure minimal energy loss, while its 300W power dissipation capability supports enhanced thermal management. This makes the STB75NF75 a preferred choice for engineers seeking reliability and performance in their electronic designs.
STB75NF75 TO-263 80A 75V 300W 0.011Ω N-Channel Mosfet Features
- High Current Capacity: Supports up to 80A for power-intensive applications.
- Voltage Rating: Operates efficiently with a maximum drain-source voltage of 75V.
- Power Dissipation: Capable of handling up to 300W, ensuring reliable performance under heavy loads.
- Low On-Resistance: Features a low RDS(on) of 0.011 Ohm, minimizing conduction losses.
- Thermal Efficiency: Optimized for effective heat dissipation, enhancing the longevity of the component.
- Robust Package: Presented in a TO-263 package, offering mechanical and thermal stability.
- High Switching Speed: Enables rapid switching for high-frequency applications.
STB75NF75 TO-263 80A 75V 300W 0.011Ω N-Channel Mosfet Applications
- Industrial Motor Drives: Ideal for controlling and driving motors in industrial automation systems.
- Power Supply Units: Used in designing efficient and reliable power supply systems for various electronic devices.
- Automotive Systems: Integral in automotive electronic modules, supporting high power density and robust performance.
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