STB26NM60ND TO-263 21A 600V 190W 175mΩ N-Channel Mosfet

STB26NM60ND TO-263 21A 600V 190W 175mΩ N-Channel Mosfet

STB26NM60ND TO-263 21A 600V 190W 175mΩ N-Channel Mosfet Description

STB26NM60ND TO-263 21A 600V 190W N Kanal Mosfet is a robust and efficient component designed to elevate power management in electronic systems. With its high current and voltage capabilities, this MOSFET is ideal for demanding applications across various industries, including automotive, industrial, and consumer electronics. Its compact TO-263 package ensures optimal thermal performance, making it a preferred choice for engineers seeking reliability and efficiency.

STB26NM60ND TO-263 21A 600V 190W 175mΩ N-Channel Mosfet Features

• Drain-Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 21A
• Drain-Source On-Resistance (Rds(on)): 175mOhm
• Power Dissipation (Pd): 190W
• Gate Threshold Voltage (Vgs(th)): [Value]
• Operating Temperature Range (Tj): [Value]
• Package Type: TO-263

STB26NM60ND TO-263 21A 600V 190W 175mΩ N-Channel Mosfet Applications

• Switching Power Supplies: Ensures efficient power conversion and regulation in power supply units.
• Motor Control: Ideal for controlling motors in automotive and industrial applications due to its high current capacity.
• LED Lighting Systems: Regulates power in LED drivers to enhance energy efficiency and longevity.