The SI2369DS-T1-GE3DKR-ND is a high-performance P-channel MOSFET designed for efficiency in power management applications. With its compact SOT-23 package, this MOSFET provides reliable performance in space-constrained environments. Its ability to handle up to 30V and 7.6A makes it ideal for a variety of electronics, ensuring optimal power delivery and minimal heat dissipation up to 1.25W. This component is indispensable for engineers seeking to enhance power efficiency and device reliability.
SI2369DS-T1-GE3DKR-ND SOT-23 30V 7.6A 1.25W P-Channel 29MOHM Mosfet Features
- Low On-Resistance: 29mΩ for efficient power conduction
- Compact Package: SOT-23 design for space-saving integration
- Thermal Efficiency: Rated power dissipation up to 1.25W
- High Current Capability: Supports continuous current up to 7.6A
- Voltage Tolerance: Handles up to 30V for robust operation
- Enhanced Switching Speed: Optimized for high-frequency applications
- Temperature Resilience: Reliable performance across a wide temperature range
SI2369DS-T1-GE3DKR-ND SOT-23 30V 7.6A 1.25W P-Channel 29MOHM Mosfet Applications
- Power Management Systems: Ideal for DC-DC converters and voltage regulation
- Consumer Electronics: Enhances efficiency in smartphones and tablets
- Automotive Electronics: Suitable for use in automotive control systems
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