NGTB40N120FL2WG TO-247 80A 1200V 535W IGBT Transistor

NGTB40N120FL2WG TO-247 80A 1200V 535W IGBT Transistor

NGTB40N120FL2WG TO-247 80A 1200V 535W IGBT Transistor Description

NGTB40N120FL2WG TO-247 80A 1200V 535W IGBT Transistor is a high-performance insulated-gate bipolar transistor (IGBT) designed for demanding industrial applications. With its robust TO-247 package, this device offers a superior combination of high power handling and efficiency, making it ideal for applications requiring reliable switching capabilities. The 80A current rating and 1200V voltage capacity ensure that it can handle intensive electrical loads, while its 535W power dissipation capability underscores its thermal resilience. This NGTB40N120FL2WG model is a critical component for engineers seeking to optimize performance in power electronics systems.

NGTB40N120FL2WG TO-247 80A 1200V 535W IGBT Transistor Features

• Maximum Collector Current (I_C): 80A
• Collector-Emitter Voltage (V_CE): 1200V
• Power Dissipation (P_D): 535W
• Package Type: TO-247
• Low Saturation Voltage: Enhances efficiency
• High-Speed Switching: Improves performance in dynamic applications
• Robust Thermal Management: Ensures reliability under heavy loads

NGTB40N120FL2WG TO-247 80A 1200V 535W IGBT Transistor Applications

• Industrial Inverters: Utilized in AC motor drives and power conversion systems
• Renewable Energy Systems: Ideal for solar inverters and wind turbine converters
• Electric Vehicle Charging Stations: Ensures efficient power transfer and management