MDS3652URH SOIC-8 11A 30V 3.1W 0.017OHM P-Channel Mosfet is designed for high-efficiency power management in modern electronic systems. This P-channel MOSFET, with its compact SOIC-8 package, is ideal for applications demanding reliable handling of up to 11A continuous current at a maximum of 30V. With a power dissipation capacity of 3.1W, it is engineered for demanding environments where thermal management is crucial. Its low on-resistance of 0.017Ohm ensures minimal power loss and optimal performance.
MDS3652URH SOIC-8 11A 30V 3.1W 0.017OHM P-Channel Mosfet Features
- Package Type: SOIC-8 for compact and efficient PCB layout
- Current Rating: Capable of handling 11A continuous current
- Voltage Rating: Supports a maximum drain-source voltage of 30V
- Power Dissipation: Rated for 3.1W to ensure robust performance
- Low On-Resistance: Features a minimized on-resistance of 0.017Ohm for reduced power loss
- Thermal Characteristics: Optimized for efficient heat distribution in thermal management systems
- High Reliability: Designed for longevity in diverse electronic applications
MDS3652URH SOIC-8 11A 30V 3.1W 0.017OHM P-Channel Mosfet Applications
- Power Conversion Systems: Ideal for DC-DC converters and power regulation circuits
- Automotive Electronics: Suitable for use in vehicle power management and control systems
- Industrial Automation: Provides effective switching in motor drives and industrial power supplies
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