IXYH40N120B3D1 TO-247 86A 1200V 480W IGBT Transistor

IXYH40N120B3D1 TO-247 86A 1200V 480W IGBT Transistor

IXYH40N120B3D1 TO-247 86A 1200V 480W IGBT Transistor Description

The IXYH40N120B3D1 TO-247 86A 1200V 480W IGBT Transistör is a high-performance, insulated-gate bipolar transistor designed to meet the rigorous demands of modern electronic applications. Known for its exceptional efficiency and power handling capabilities, this IGBT is pivotal in high-power, high-frequency applications. Its robust construction and advanced features make it a preferred choice for engineers looking to optimize energy conversion and management.

IXYH40N120B3D1 TO-247 86A 1200V 480W IGBT Transistor Features

• High Current Capability: Supports a continuous collector current of 86A, suitable for heavy-duty applications.
• High Voltage Rating: Withstands up to 1200V, ideal for high-voltage power systems.
• Power Dissipation: Capable of handling power dissipation up to 480W, ensuring reliable performance in demanding environments.
• Low Saturation Voltage: Minimizes power loss, enhancing efficiency.
• Fast Switching Speed: Improves overall system performance with reduced switching times.
• Rugged TO-247 Package: Provides excellent thermal and electrical characteristics.
• Enhanced Thermal Management: Designed for optimal heat dissipation in applications with significant thermal stress.

IXYH40N120B3D1 TO-247 86A 1200V 480W IGBT Transistor Applications

• Industrial Motor Drives: Efficiently controls high-power motors in industrial settings.
• Renewable Energy Inverters: Key component in solar and wind power inverters, enhancing energy conversion efficiency.
• Power Supply Units: Integral in designing reliable and efficient power supply circuits for various electronic devices.