IXTQ130N10T TO-3P 130A 100V 360W 9.1mΩ N-Channel Mosfet is an advanced power MOSFET designed for high-efficiency and robust performance in demanding applications. With its 100V drain-source voltage and 360W power dissipation, this device stands out in its class, offering superior current handling up to 130A. Packaged in the TO-3P form factor, it ensures enhanced thermal performance and reliability, making it an ideal choice for various high-power electronic designs.
IXTQ130N10T TO-3P 130A 100V 360W 9.1mΩ N-Channel Mosfet Features
- High Current Capacity: Supports up to 130A continuous current, ideal for high-power applications.
- Voltage Rating: Withstands up to 100V drain-source voltage for enhanced operational flexibility.
- Power Dissipation: Capable of handling 360W, ensuring efficient energy management.
- Low On-State Resistance: Offers a low RDS(on) of 9.1mOhm, reducing conduction losses.
IXTQ130N10T TO-3P 130A 100V 360W 9.1mΩ N-Channel Mosfet Applications
- Power Supply Units: Ideal for use in high-power switch-mode power supplies (SMPS) and DC-DC converters.
- Electric Vehicles: Suitable for use in electric vehicle powertrain systems, enhancing efficiency and reliability.
- Industrial Automation: Used in motor drives and control systems for industrial machinery, optimizing performance.