IXGQ90N33TCD1 TO-3P 90A 330V 200W IGBT Transistor

IXGQ90N33TCD1 TO-3P 90A 330V 200W IGBT Transistor

IXGQ90N33TCD1 TO-3P 90A 330V 200W IGBT Transistor Description

The IXGQ90N33TCD1 is a high-performance IGBT transistor designed for power electronics applications. Encased in a robust TO-3P package, this transistor offers peak efficiency and reliability, making it a staple in industries requiring precise control and high power handling capabilities. With a current rating of 90A, voltage rating of 330V, and a power dissipation capacity of 200W, it is tailored to meet the demands of modern power systems.

IXGQ90N33TCD1 TO-3P 90A 330V 200W IGBT Transistor Features

• High Current Capacity: Capable of handling up to 90A for demanding applications.
• High Voltage Rating: Supports up to 330V, ideal for diverse power systems.
• Significant Power Dissipation: Designed for 200W power dissipation, enhancing thermal management.
• TO-3P Package: Ensures efficient thermal dissipation and mechanical stability.
• Low On-State Voltage: Reduces conduction losses and improves efficiency.
• Rugged Construction: Provides robust performance in harsh environments.
• Fast Switching Speed: Optimizes performance in high-frequency applications.

IXGQ90N33TCD1 TO-3P 90A 330V 200W IGBT Transistor Applications

• Inverter Systems: Utilized in high-power inverter applications for renewable energy systems.
• Motor Drives: Ideal for industrial motor control systems requiring precise current and voltage regulation.
• Power Supply Units: Used in high-efficiency power supplies for various electronic equipment.