The IXGH16N170 TO-247 32A 1700V 190W IGBT Transistör is a high-performance semiconductor device designed for efficiency in demanding power applications. Ideal for engineers working on cutting-edge power conversion and management technologies, this transistor offers reliable performance in high-frequency and high-voltage environments. Its ability to handle significant current and power loads makes it indispensable in the development of modern electrical systems.
IXGH16N170 TO-247 32A 1700V 190W IGBT Transistor Features
- Collector Current (Ic): 32A
- Collector-Emitter Voltage (Vce): 1700V
- Power Dissipation (Pd): 190W
- Package Type: TO-247
- Switching Frequency: High-frequency capability
- Thermal Resistance: Efficient heat dissipation
- Short Circuit Capability: Robust protection features
IXGH16N170 TO-247 32A 1700V 190W IGBT Transistor Applications
- Industrial Inverters: Used in high-power industrial inverters for efficient energy conversion.
- Electric Vehicle Drives: Essential in controlling and managing power distribution in electric vehicle drive systems.
- Solar Inverters: Integral component for converting DC to AC in solar power systems, ensuring optimal energy harvest.
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