IXDH20N120D1 TO-247 38A 1200V 200W IGBT Transistor is a high-performance Insulated Gate Bipolar Transistor (IGBT) that delivers superior efficiency and reliability for high-power applications. Engineered for robust electrical performance, it is ideal for use in industrial systems, renewable energy solutions, and automotive applications where high voltage and current handling are critical. Its TO-247 package ensures excellent thermal and electrical characteristics, making it a staple in the power electronics industry.
IXDH20N120D1 TO-247 38A 1200V 200W IGBT Transistor Features
- Maximum Collector Current: 38A
- Collector-Emitter Voltage: 1200V
- Power Dissipation: 200W
- Low On-State Voltage Drop: Reduces power loss
- Fast Switching Speed: Enhances efficiency in dynamic operations
- Rugged Construction: Ensures durability in demanding environments
- Thermal Resistance: Optimized for high thermal performance
IXDH20N120D1 TO-247 38A 1200V 200W IGBT Transistor Applications
- Industrial Motor Drives: Facilitates efficient control and operation of high-power motors
- Renewable Energy Systems: Key component in solar inverters and wind turbine converters
- Automotive Electronics: Integral to electric vehicle powertrains and charging infrastructure
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