IRF1405PBF TO-220 169A 55V N-Channel HEXFET Power Mosfet is a high-performance semiconductor device designed for efficient power management and switching solutions in electronic circuits. Widely used in the industry for its robustness and reliability, this MOSFET is integral to applications requiring high current and voltage handling capabilities. Its advanced HEXFET technology ensures minimal power loss, making it a preferred choice among engineers and professionals.
IRF1405PBF TO-220 169A 55V N-Channel HEXFET Power Mosfet Features
- Maximum Continuous Drain Current (ID): 169A
- Drain-Source Voltage (VDS): 55V
- Package Type: TO-220
- Configuration: N-Channel
- RDS(on) (Max) @ 10V VGS: [Value] mΩ
- Gate Charge (Qg): [Value] nC
- Operating Temperature Range: [Value] °C
IRF1405PBF TO-220 169A 55V N-Channel HEXFET Power Mosfet Applications
- Automotive Applications: Perfect for use in electric power steering and fuel injection systems.
- Industrial Power Supplies: Ideal for high-efficiency energy conversion and management.
- Consumer Electronics: Suitable for power management in devices like home appliances and audio systems.
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