IPB123N10N3G TO-263 58A 100V 94W N-Channel Mosfet

IPB123N10N3G TO-263 58A 100V 94W N-Channel Mosfet

IPB123N10N3G TO-263 58A 100V 94W N-Channel Mosfet Description

The IPB123N10N3G TO-263 package is a high-performance N-channel MOSFET designed to meet the demanding requirements of modern electronic applications. This robust component is capable of handling up to 58A of continuous current with a drain-to-source voltage of 100V, making it ideal for power management solutions. With a power dissipation capacity of 94W, it is engineered for efficiency and reliability in various industrial and consumer electronics.

IPB123N10N3G TO-263 58A 100V 94W N-Channel Mosfet Features

• Low On-State Resistance: Ensures minimal power loss and improved efficiency.
• High-Speed Switching: Optimized for fast switching applications to enhance performance.
• Enhanced Thermal Performance: TO-263 package provides superior heat dissipation.
• Rugged Construction: Designed to withstand harsh operational environments.
• Integrated Protection Features: Includes over-temperature and over-voltage protection.
• Optimized Gate Threshold Voltage: Suitable for low voltage drive applications.
• Compliance with Industry Standards: Meets global safety and performance regulations.

IPB123N10N3G TO-263 58A 100V 94W N-Channel Mosfet Applications

• Power Supply Units: Ideal for use in switched-mode power supplies and DC-DC converters.
• Motor Control: Suitable for use in industrial motor drives and automotive applications.
• Renewable Energy Systems: Efficient component for solar inverters and wind turbine controllers.