IPB042N10N3GATMA1 TO-263 137A 100V 214W 4.2Ω N-Channel Mosfet

IPB042N10N3GATMA1 TO-263 137A 100V 214W 4.2Ω N-Channel Mosfet

IPB042N10N3GATMA1 TO-263 137A 100V 214W 4.2Ω N-Channel Mosfet Description

IPB042N10N3GATMA1 in the TO-263 package is a robust and efficient N-channel MOSFET, designed to meet the rigorous demands of modern electronic circuits. With a current handling capability of 137A, a breakdown voltage of 100V, and a power dissipation of 214W, this MOSFET is ideal for high-performance applications where reliability and efficiency are paramount. Its low on-resistance of 4.2 Ohm ensures minimal power loss, making it a valuable component in energy-sensitive designs.

IPB042N10N3GATMA1 TO-263 137A 100V 214W 4.2Ω N-Channel Mosfet Features

• High Current Rating: Capable of handling up to 137A, suitable for high-power applications.
• High Voltage Tolerance: Withstands up to 100V, ensuring reliability in demanding environments.
• Efficient Power Dissipation: Offers a maximum power dissipation of 214W, reducing thermal stress.
• Low On-Resistance: Features a 4.2 Ohm resistance, enhancing energy efficiency.
• TO-263 Package: Compact design facilitates easy integration into circuit layouts.
• Thermal Management: Optimized for effective heat dissipation.
• Durable Construction: Built to withstand harsh operating conditions.

IPB042N10N3GATMA1 TO-263 137A 100V 214W 4.2Ω N-Channel Mosfet Applications

• Power Supply Units: Ideal for use in high-efficiency power supply designs.
• Motor Control: Suitable for controlling motors in industrial and consumer applications.
• Inverter Circuits: Used in inverter designs for renewable energy systems.