IPB027N10N5 TO-263 120A 100V N-Channel Mosfet Transistor is a high-performance semiconductor component designed for efficient power management in various electronic systems. With its robust TO-263 package, this N-channel MOSFET offers superior thermal performance and outstanding current-carrying capability. Capable of handling up to 120A and operating at a maximum voltage of 100V, it is an essential component for engineers seeking reliability and efficiency in their projects.
IPB027N10N5 TO-263 120A 100V N-Channel Mosfet Transistor Features
- High Current Capacity: Supports up to 120A for demanding applications
- Voltage Rating: Operates efficiently at a maximum voltage of 100V
- TO-263 Package: Ensures optimal thermal management and space-saving design
- N-Channel Configuration: Facilitates easier integration in switching circuits
- Low On-Resistance: Minimizes power losses and enhances system efficiency
- Fast Switching Speed: Improves response times in dynamic applications
- Robust Construction: Guarantees durability and long operational life
IPB027N10N5 TO-263 120A 100V N-Channel Mosfet Transistor Applications
- Power Supply Units: Ideal for efficient power conversion in DC-DC converters
- Automotive Electronics: Utilized in motor control and battery management systems
- Industrial Automation: Suitable for high-power motor drives and control systems
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