IHW20N120R5 - (H20MR5) TO-247 20A 1200V 288W IGBT Transistor is a high-performance insulated-gate bipolar transistor (IGBT) designed to excel in demanding industrial and power electronics applications. Its remarkable efficiency and robust design make it an ideal choice for engineers seeking reliable performance in high-voltage and high-current environments.
IHW20N120R5 - (H20MR5) TO-247 20A 1200V 288W IGBT Transistor Features
- Low Conduction Losses: Minimizes power dissipation, enhancing overall system efficiency.
- High Voltage Capability: Rated for 1200V, suitable for demanding high-voltage applications.
- High Current Rating: Supports up to 20A, ensuring robust performance.
- TO-247 Package: Ensures excellent thermal management and easy integration into existing systems.
- Fast Switching Speed: Reduces switching losses, improving efficiency and performance.
- Durable Construction: Designed to withstand harsh environmental conditions.
- Integrated Protection Features: Safeguards against overcurrent and overheating.
IHW20N120R5 - (H20MR5) TO-247 20A 1200V 288W IGBT Transistor Applications
- Industrial Inverters: Ideal for converting DC to AC in high-power industrial settings.
- Motor Drives: Enhances the efficiency and reliability of electric motor systems.
- Renewable Energy Systems: Integral to solar inverters and wind turbine converters, supporting clean energy initiatives.