IHW20N120R3 - (H20R1203) TO-247 40A 1200V 310W IGBT Transistor

IHW20N120R3 - (H20R1203) TO-247 40A 1200V 310W IGBT Transistor

IHW20N120R3 - (H20R1203) TO-247 40A 1200V 310W IGBT Transistor Description

IHW20N120R3 - (H20R1203) TO-247 40A 1200V 310W IGBT Transistör is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for robust power management solutions in demanding applications. This component is integral to optimizing efficiency and reliability in electronic systems, making it indispensable for industries ranging from renewable energy to industrial automation.

IHW20N120R3 - (H20R1203) TO-247 40A 1200V 310W IGBT Transistor Features

• High Current Capacity: Capable of handling up to 40A for demanding applications.
• High Voltage Rating: Operates effectively at 1200V, ensuring compatibility with high-voltage systems.
• Efficient Power Management: Delivers 310W of power, optimizing energy use.
• Compact Package: The TO-247 package provides superior thermal management and ease of integration.
• Low Switching Losses: Minimizes energy losses during operation, enhancing overall efficiency.
• High Reliability: Built for durability in harsh environments, ensuring long-term performance.
• Fast Switching Speed: Enables quick response times in dynamic applications.

IHW20N120R3 - (H20R1203) TO-247 40A 1200V 310W IGBT Transistor Applications

• Renewable Energy Systems: Ideal for solar inverters and wind turbine converters, providing efficient energy conversion.
• Industrial Automation: Powers motor drives and robotics, enhancing automation efficiency and precision.
• Power Supply Units: Essential for high-performance power supplies in data centers and industrial settings.