HY3210P TO-220 120A 100V 237W 0.0085Ω N-Channel Mosfet is a highly efficient power semiconductor device, designed to handle high currents and voltages with exceptional reliability. Ideal for power management applications, the HY3210P offers engineers and designers an optimal solution for enhancing the efficiency and performance of modern electronic systems. Its robust TO-220 package and advanced technology make it suitable for a variety of demanding applications in the electronics industry.
HY3210P TO-220 120A 100V 237W 0.0085Ω N-Channel Mosfet Features
- Current Handling Capability: Handles up to 120A of continuous current, making it suitable for high-power applications.
- Voltage Rating: Operates efficiently at a breakdown voltage of 100V, ensuring stability in high-voltage environments.
- Power Dissipation: Supports a maximum power dissipation of 237W, providing excellent thermal management.
- Low On-State Resistance: Features a minimal on-state resistance of 0.0085 Ohms, reducing power loss and heat generation.
- Package Type: Encapsulated in a durable TO-220 package for easy mounting and heat dissipation.
- Switching Speed: Designed for fast switching times, enhancing efficiency in dynamic applications.
- Thermal Resistance: Low thermal resistance ensures reliable operation under high power conditions.
HY3210P TO-220 120A 100V 237W 0.0085Ω N-Channel Mosfet Applications
- Power Supplies: Utilized in designing efficient power supply units for industrial and consumer electronics.
- Motor Controllers: Employed in electric motor control systems for automotive and industrial machinery.
- Inverters: Ideal for use in solar inverters, enhancing the conversion efficiency of renewable energy systems.
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