HY1906P TO-220 120A 60V 7.5mΩ N-Channel Mosfet

HY1906P TO-220 120A 60V 7.5mΩ N-Channel Mosfet

HY1906P TO-220 120A 60V 7.5mΩ N-Channel Mosfet Description

HY1906P TO-220 120A 60V 7.5mΩ N-Channel Mosfet is a high-performance power semiconductor device designed to meet the rigorous demands of modern electronic systems. With a robust 120A current rating and a low on-state resistance of 7.5mOhm, this N Kanal Mosfet ensures efficient power management in applications ranging from automotive systems to industrial equipment. Its TO-220 package provides excellent thermal performance, making it a preferred choice for engineers seeking reliability and efficiency in high-power applications. The device's ability to handle up to 60V further extends its versatility across various circuit designs.

HY1906P TO-220 120A 60V 7.5mΩ N-Channel Mosfet Features

• Maximum Continuous Current: 120A
• On-State Resistance: as low as 7.5mOhm
• Maximum Drain-Source Voltage: 60V
• Package Type: TO-220
• Thermal Resistance: Efficient heat dissipation capabilities
• Gate Charge: Low gate charge for faster switching speeds
• Operating Temperature Range: Wide temperature range for various environments

HY1906P TO-220 120A 60V 7.5mΩ N-Channel Mosfet Applications

• Automotive Systems: Ideal for power distribution and motor control in electric vehicles
• Industrial Equipment: Enhances the efficiency of power tools and machinery
• Power Supply Units: Suitable for use in high-performance power conversion systems