GT30F123 TO-220F 200A 300V N Kanal IGBT Transistör is a highly efficient semiconductor device designed for high-power applications. This N-channel IGBT is perfect for engineers seeking reliable performance in demanding environments, offering superior efficiency and thermal management. Its robust design and high current capability make it essential for modern industrial and consumer applications.
GT30F123 TO-220F 200A 300V N-Channel IGBT Transistor Features
- Collector-Emitter Voltage (VCEO): 300V
- Continuous Collector Current (IC): 200A
- Package Type: TO-220F
- Switching Speed: High-speed switching capability
- Thermal Resistance: Low thermal resistance for efficient heat dissipation
- Gate Threshold Voltage (VGE(th)): Optimal gate voltage for enhanced control
- Applications: Suitable for both industrial and consumer electronics
GT30F123 TO-220F 200A 300V N-Channel IGBT Transistor Applications
- Motor Drives: Used in variable frequency drives for efficient motor control
- Renewable Energy Systems: Integral in solar inverters and wind turbine converters
- Power Supplies: Essential component in high-power SMPS and UPS systems
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