FQPF4N80 is a high-performance N-channel MOSFET tailored for demanding applications in power management and switching. Its robust architecture and high voltage capacity make it an essential component in the electronics industry, ensuring efficiency and reliability in power circuits. With its TO-220F package, the component offers excellent thermal conductivity and ease of mounting, crucial for high-density electronic systems.
FQPF4N80 TO-220F 2.2A 800V 43W 3.6Ω N-Channel Mosfet Features
- Maximum Continuous Drain Current: 2.2A for efficient current handling in power applications.
- Drain-Source Voltage (VDS): 800V, supporting high-voltage operations with stability.
- Power Dissipation: 43W, ensuring high power efficiency and minimal thermal loss.
- On-State Resistance: 3.6 Ohm, minimizing power loss in the on-state.
- Package Type: TO-220F, providing a compact and thermally efficient solution.
- Operating Temperature Range: Wide range to suit various environmental conditions.
- Gate Charge: Low gate charge for fast switching speeds and reduced gate drive losses.
FQPF4N80 TO-220F 2.2A 800V 43W 3.6Ω N-Channel Mosfet Applications
- Switching Power Supplies: Utilized in power conversion systems for efficient energy transfer.
- Motor Drives: Ideal for controlling electric motor speed and torque in industrial applications.
- Lighting Systems: Integrated into high-efficiency LED drivers for enhanced illumination control.
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