FQPF19N20C TO-220-F Mosfet – N Kanal QFET 200 V 19 A 170 M Ohm is a high-performance semiconductor device designed for efficient power switching and amplification in industrial applications. With its robust construction and advanced technology, this Mosfet is a critical component for engineers seeking reliability and efficiency in their electronic designs.
FQPF19N20C TO220-F Mosfet – N-Channel, QFET 200 V, 19 A, 170 M OHM Features
- Drain-Source Voltage: 200 V
- Continuous Drain Current: 19 A
- On-Resistance: 170 mΩ
- Package Type: TO-220-F
- Gate Threshold Voltage: [Value]
- Power Dissipation: [Value]
- Operating Temperature Range: [Value]
FQPF19N20C TO220-F Mosfet – N-Channel, QFET 200 V, 19 A, 170 M OHM Applications
- Switching Power Supplies: Ensures efficient power conversion in industrial and consumer electronics
- Motor Control: Ideal for driving motors in automotive and industrial automation
- Inverter Circuits: Enhances the performance of inverters used in renewable energy systems
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