FQP3N80C TO-220 3A 800V 107W 4.8Ω N-Channel Mosfet

FQP3N80C TO-220 3A 800V 107W 4.8Ω N-Channel Mosfet

FQP3N80C TO-220 3A 800V 107W 4.8Ω N-Channel Mosfet Description

FQP3N80C is a robust N-channel MOSFET transistor designed for high-power applications, offering an impressive breakdown voltage of 800V and a current capacity up to 3A. Encased in a TO-220 package, this component is a staple in power electronics, ideal for engineers seeking reliable performance in demanding environments. With a power dissipation capability of 107W, the FQP3N80C is perfectly suited for high-efficiency power conversion and switching applications.

FQP3N80C TO-220 3A 800V 107W 4.8Ω N-Channel Mosfet Features

• High Breakdown Voltage: 800V ensures reliable operation in high-voltage environments.
• Current Rating: Capable of handling up to 3A for versatile applications.
• Package Type: TO-220 for easy mounting and efficient heat dissipation.
• Power Dissipation: 107W suitable for high-power applications.
• RDS(on): 4.8 Ohm for minimized conduction losses.
• Gate Threshold Voltage: [Value] for precise control in switching applications.
• Operating Temperature Range: [Value] for enhanced reliability in extreme conditions.

FQP3N80C TO-220 3A 800V 107W 4.8Ω N-Channel Mosfet Applications

• Switch Mode Power Supplies (SMPS): Ideal for efficient energy conversion in power supply units.
• Motor Drivers: Suitable for driving motors in industrial automation systems.
• Inverters: Used in the conversion of DC to AC power for renewable energy systems.