FQA55N10 is a high-performance N-channel MOSFET designed to meet the demanding needs of modern electronic systems. Packaged in the robust TO-3P format, it is ideal for high-current and high-voltage applications, delivering a substantial 61A of continuous current and supporting up to 100V. With a power dissipation capacity of 190W, this component is essential for engineers seeking reliability and efficiency in their designs.
FQA55N10 TO-3P 61A 100V 190W 0.026Ω N-Channel Mosfet Features
- Low On-State Resistance: 0.026 Ohm for efficient power management
- High Continuous Drain Current: 61A to support demanding applications
- High Voltage Rating: 100V for robust performance in high-voltage environments
- Power Dissipation: Capable of handling up to 190W
- Thermal Resistance: Low thermal resistance ensures efficient heat dissipation
- Rugged Construction: TO-3P package for durability and reliability
- Fast Switching Speed: Optimized for minimal delay in circuit operations
FQA55N10 TO-3P 61A 100V 190W 0.026Ω N-Channel Mosfet Applications
- Power Supplies: Utilized in switch-mode power supplies for its efficiency and performance
- Motor Control: Ideal for driving motors in industrial and consumer electronics
- Power Amplifiers: Suitable for audio and RF amplifiers, providing high power output
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