FGB20N60SF TO-263 40A 600V 208W IGBT Transistor

FGB20N60SF TO-263 40A 600V 208W IGBT Transistor

FGB20N60SF TO-263 40A 600V 208W IGBT Transistor Description

FGB20N60SF TO-263 40A 600V 208W IGBT Transistor is a high-performance semiconductor device designed for efficient power management in high-voltage applications. With its robust TO-263 package, this IGBT transistor delivers a continuous collector current of 40A, a collector-emitter voltage rating of 600V, and a power dissipation of 208W. It is engineered to meet the demands of modern electronic systems, providing reliable switching performance for industrial and consumer applications.

FGB20N60SF TO-263 40A 600V 208W IGBT Transistor Features

• Low Saturation Voltage: Ensures minimal power loss and efficient operation.
• High-Speed Switching: Facilitates rapid switching with reduced delay times.
• Rugged Design: Durable construction to withstand harsh operating conditions.
• TO-263 Package: Compact and thermally efficient form factor.
• High Current Capability: Supports up to 40A of continuous current.
• High Voltage Rating: Operates efficiently at up to 600V.
• High Power Dissipation: Capable of handling up to 208W.

FGB20N60SF TO-263 40A 600V 208W IGBT Transistor Applications

• Industrial Motor Drives: Enhances performance and energy efficiency in motor control systems.
• Power Inverters: Ideal for converting DC to AC power in renewable energy setups.
• Uninterruptible Power Supplies (UPS): Ensures reliable power backup in critical applications.