FGAF40N60UFD TO-3PF 40A 600V 100W IGBT Transistor

FGAF40N60UFD TO-3PF 40A 600V 100W IGBT Transistor

FGAF40N60UFD TO-3PF 40A 600V 100W IGBT Transistor Description

FGAF40N60UFD is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficiency and reliability in power switching applications. Encased in a TO-3PF package, this IGBT delivers a robust 40A current handling capability and a breakdown voltage of 600V, making it ideal for demanding environments. With a maximum power dissipation of 100W, it provides exceptional thermal performance, ensuring longevity and stability in industrial applications.

FGAF40N60UFD TO-3PF 40A 600V 100W IGBT Transistor Features

• High Current Capacity: Handles up to 40A for high-power applications.
• High Voltage Rating: Can withstand voltages up to 600V ensuring safe operation in high-voltage systems.
• TO-3PF Package: Provides excellent thermal management and mechanical stability.
• Low Saturation Voltage: Ensures efficient energy use with minimal power loss.
• Fast Switching Speed: Enhances performance in dynamic load environments.
• Rugged Design: Built to withstand harsh conditions and prolong device life.
• 100W Power Dissipation: Maximizes heat dissipation for reliable operation.

FGAF40N60UFD TO-3PF 40A 600V 100W IGBT Transistor Applications

• Industrial Motor Drives: Suitable for driving large-scale motors requiring high current and voltage.
• Power Inverters: Ideal for converting DC to AC in renewable energy systems.
• Switch Mode Power Supplies: Ensures efficient power conversion in various electronic devices.