FDD5612 TO-252 18A 60V 36mΩ 42W N-Channel Mosfet

FDD5612 TO-252 18A 60V 36mΩ 42W N-Channel Mosfet

FDD5612 TO-252 18A 60V 36mΩ 42W N-Channel Mosfet Description

FDD5612 TO-252 18A 60V 36mΩ 42W N-Channel Mosfet is a high-performance semiconductor component specifically designed for efficient power management in electronic circuits. As a key component in modern power electronics, this MOSFET offers outstanding reliability and efficiency, particularly in high-frequency switching applications. Its compact TO-252 package allows for easy integration into densely populated circuit boards, making it a preferred choice for engineers aiming to optimize space without compromising on performance.

FDD5612 TO-252 18A 60V 36mΩ 42W N-Channel Mosfet Features

• High Continuous Drain Current: Capable of handling up to 18A, ensuring robust operation in demanding applications.
• Drain-Source Voltage: Rated at 60V, suitable for a wide range of power conversion applications.
• Low On-Resistance: With an on-resistance of 36mOhm, it minimizes power loss, enhancing overall efficiency.
• Power Dissipation: Supports up to 42W, enabling high-power operations without overheating.
• Thermal Resistance: Designed to efficiently dissipate heat, ensuring stability in high-power environments.
• Fast Switching Speed: Optimized for rapid switching, reducing switching losses in high-frequency applications.
• Reverse Recovery Time: Features quick recovery time for improved efficiency in synchronous rectification applications.

FDD5612 TO-252 18A 60V 36mΩ 42W N-Channel Mosfet Applications

• Power Supply Units: Ideal for use in switch-mode power supplies (SMPS) due to its high efficiency and low on-resistance.
• Motor Drives: Perfect for motor control applications where reliable and efficient operation is crucial.
• DC-DC Converters: Suitable for use in step-down and step-up converters, ensuring effective voltage regulation.