BUP213 TO-220 32A 1200V 200W IGBT Transistor

BUP213 TO-220 32A 1200V 200W IGBT Transistor

BUP213 TO-220 32A 1200V 200W IGBT Transistor Description

BUP213 TO-220 32A 1200V 200W IGBT Transistor is a high-performance electronic component designed to meet the demanding needs of modern power electronics. With its robust construction and exceptional efficiency, this insulated-gate bipolar transistor (IGBT) is integral in optimizing energy conversion and management in various industrial applications. The combination of a high current capacity of 32A and a voltage rating of 1200V makes it a reliable choice for engineers aiming to enhance the performance and reliability of their systems.

BUP213 TO-220 32A 1200V 200W IGBT Transistor Features

• High Current Capacity: Capable of handling up to 32A, ensuring robust performance under heavy loads.
• High Voltage Rating: Supports up to 1200V, making it suitable for high-voltage applications.
• Power Dissipation: Rated at 200W, allowing for efficient thermal management.
• Package Type: Comes in a TO-220 package for easy integration into existing systems.
• Switching Speed: Optimized for rapid switching to improve system efficiency.
• Low Saturation Voltage: Minimizes power losses during operation.
• Robust Construction: Designed to withstand harsh operating conditions.

BUP213 TO-220 32A 1200V 200W IGBT Transistor Applications

• Industrial Motor Drives: Enhances performance and efficiency in variable frequency drives and servo motors.
• Renewable Energy Systems: Integral in inverters for solar and wind power systems, ensuring reliable energy conversion.
• Power Supply Units: Used in high-voltage power supplies to improve output stability and efficiency.