2SK1169 TO-3P 450V 20A 120W N-Channel Mosfet Transistor is a high-performance semiconductor device designed for power electronics applications. With its robust 450V breakdown voltage and a current capacity of 20A, this TO-3P package MOSFET offers exceptional efficiency and reliability. It is widely used by engineers in the design of power management systems and switching applications, providing high-speed switching and low on-resistance.
2SK1169 TO-3P 450V 20A 120W N-Channel Mosfet Transistor Features
- High Breakdown Voltage: Capable of withstanding 450V, ensuring robustness in high-voltage circuits.
- Current Handling Capability: Supports up to 20A of continuous current, ideal for power applications.
- Power Dissipation: Manages up to 120W of power, enhancing thermal management in compact designs.
- Package Type: TO-3P package offers a compact and efficient thermal interface.
- Low On-Resistance: Minimizes power loss during operation for increased efficiency.
- High-Speed Switching: Facilitates rapid transitions in switching applications.
- Rugged Construction: Designed to endure harsh operating conditions.
2SK1169 TO-3P 450V 20A 120W N-Channel Mosfet Transistor Applications
- Switch Mode Power Supplies (SMPS): Ideal for use in high-efficiency power supply designs.
- Motor Control: Suitable for controlling electric motors in various industrial applications.
- Inverter Circuits: Utilized in power inverters for renewable energy systems, enhancing conversion efficiency.