2SK1117 TO-220AB 600V 6A 100W N-Channel Mosfet Transistor

2SK1117 TO-220AB 600V 6A 100W N-Channel Mosfet Transistor

2SK1117 TO-220AB 600V 6A 100W N-Channel Mosfet Transistor Description

2SK1117 in the TO-220AB package is a versatile N-channel MOSFET designed to handle high-power applications efficiently. With a breakdown voltage of 600V, a current capacity of 6A, and a power dissipation of 100W, this transistor is essential for engineers seeking reliable performance in demanding environments. Widely used in the power electronics industry, this MOSFET offers exceptional switching capabilities and thermal management, making it an indispensable component in modern electronic designs.

2SK1117 TO-220AB 600V 6A 100W N-Channel Mosfet Transistor Features

• High Breakdown Voltage: Capable of withstanding up to 600V
• Current Capability: Supports continuous drain current of 6A
• Power Dissipation: Maximum power dissipation of 100W
• Low On-State Resistance: Ensures minimal power loss during operation
• Fast Switching Speed: Optimized for high-frequency applications
• Thermal Stability: Superior heat dissipation properties
• Robust Construction: Durable design for extended lifecycle

2SK1117 TO-220AB 600V 6A 100W N-Channel Mosfet Transistor Applications

• Switch Mode Power Supplies: Essential for efficient energy conversion
• Motor Control Circuits: Used in industrial and consumer motor drivers
• Inverter Circuits: Key component for DC to AC power transformation