SGL50N60RUFD - (G50N60RUFD) TO-264 80A 600V 250W IGBT Transistor

SGL50N60RUFD - (G50N60RUFD) TO-264 80A 600V 250W IGBT Transistor

SGL50N60RUFD - (G50N60RUFD) TO-264 80A 600V 250W IGBT Transistor Description

SGL50N60RUFD - (G50N60RUFD) TO-264 80A 600V 250W IGBT Transistör is a high-performance semiconductor device designed to meet the demanding requirements of modern power electronics. This powerful Insulated Gate Bipolar Transistor (IGBT) is engineered for high efficiency and reliability, making it an ideal choice for industrial and commercial applications that require robust performance and energy efficiency.

SGL50N60RUFD - (G50N60RUFD) TO-264 80A 600V 250W IGBT Transistor Features

• High Current Capacity: Rated at 80A, ensuring reliable performance in high-power applications.
• Voltage Rating: Capable of handling voltages up to 600V for a wide range of industrial uses.
• Power Dissipation: Supports up to 250W, facilitating efficient thermal management.
• Package Type: Encased in a TO-264 package, offering excellent heat dissipation and mechanical stability.
• Switching Speed: Optimized for fast switching, reducing energy loss and improving system efficiency.
• Low On-State Voltage: Minimizes conduction losses for enhanced energy savings.
• Robust Design: Built for durability and long operational life in extreme conditions.

SGL50N60RUFD - (G50N60RUFD) TO-264 80A 600V 250W IGBT Transistor Applications

• Industrial Motor Drives: Utilized in variable frequency drives for efficient motor control.
• Renewable Energy Systems: Integral in solar inverters and wind turbine systems for effective energy conversion.
• Power Supply Units: Essential for high-performance switch-mode power supplies in various industries.