SGB15N120 TO-263 30A 1200V 198W IGBT Transistor is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for efficient power management in demanding industrial applications. With its robust TO-263 package, this component is engineered to handle a substantial 30A current at a voltage of 1200V and a power dissipation of 198W. The SGB15N120 is pivotal in the development of modern power electronics, ensuring reliability and efficiency in critical systems.
SGB15N120 TO-263 30A 1200V 198W IGBT Transistor Features
- High Current Capacity: Supports up to 30A for heavy-duty applications.
- High Voltage Rating: Operates efficiently at 1200V, making it suitable for high-voltage applications.
- Thermal Efficiency: Capable of dissipating power up to 198W, enhancing thermal management.
- Robust Packaging: Encased in a durable TO-263 package for enhanced mechanical stability.
- Low Switching Loss: Designed to minimize energy loss during power conversion.
- Fast Switching Speed: Optimizes performance in high-frequency operations.
- Enhanced Durability: Built to withstand harsh industrial environments.
SGB15N120 TO-263 30A 1200V 198W IGBT Transistor Applications
- Industrial Motor Drives: Efficiently controls motor functions in manufacturing and automation.
- Renewable Energy Systems: Integral in solar inverters and wind turbine controllers for energy conversion.
- Electric Vehicle Powertrains: Key component in the power electronics of electric and hybrid vehicles.
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