MJD45H11G - (J45H11G) TO-252 80V 8A 20W PNP Transistor

MJD45H11G - (J45H11G) TO-252 80V 8A 20W PNP Transistor

MJD45H11G - (J45H11G) TO-252 80V 8A 20W PNP Transistor Description

MJD45H11G - (J45H11G) TO-252 80V 8A 20W PNP Transistor is a high-performance PNP transistor designed for power switching applications. Utilizing the TO-252 package, this robust component delivers reliable performance in demanding environments, making it an essential choice for engineers seeking efficiency and durability in their designs. With a collector-emitter voltage of 80V and a power dissipation of 20W, it is tailored for use in power management and regulation systems.

MJD45H11G - (J45H11G) TO-252 80V 8A 20W PNP Transistor Features

• High Collector-Emitter Voltage: 80V, supporting high-power operations
• Current Capacity: 8A, suitable for heavy-duty applications
• Power Dissipation: 20W, ensuring efficient thermal management
• Package Type: TO-252, offering enhanced thermal performance
• Gain Bandwidth Product: [Value] MHz, optimizing signal amplification
• Saturation Voltage: [Value] V, minimizing energy loss
• Temperature Range: [Value] °C, ensuring reliability across varied conditions

MJD45H11G - (J45H11G) TO-252 80V 8A 20W PNP Transistor Applications

• Power Amplifiers: Ideal for use in audio and RF amplification systems
• Switching Regulators: Critical in DC-DC converters and power supply units
• Motor Control Circuits: Essential for driving motors in industrial automation