MJD200 - (J200) TO-252 5A 25V 12.5W NPN BJT Transistor

MJD200 - (J200) TO-252 5A 25V 12.5W NPN BJT Transistor

MJD200 - (J200) TO-252 5A 25V 12.5W NPN BJT Transistor Description

MJD200 - (J200) TO-252 5A 25V 12.5W NPN BJT Transistör is a high-performance component designed to meet the rigorous demands of modern electronic circuits. Its robust design and superior electrical characteristics make it a staple in power amplification and switching applications. With a maximum collector current of 5A and a TO-252 package, the MJD200 ensures efficient heat dissipation and reliability in compact spaces, making it indispensable for engineers seeking performance and efficiency.

MJD200 - (J200) TO-252 5A 25V 12.5W NPN BJT Transistor Features

• Maximum Collector Current: 5A
• Maximum Collector-Emitter Voltage: 25V
• Power Dissipation: 12.5W
• Package Type: TO-252 for superior thermal performance
• High Current Gain: Ideal for amplification
• Low Saturation Voltage: Enhances efficiency in switching applications
• Rugged Design: Ensures long-term reliability in demanding environments

MJD200 - (J200) TO-252 5A 25V 12.5W NPN BJT Transistor Applications

• Power Amplifiers: Suitable for high-fidelity audio and RF amplifiers
• Switching Regulators: Ideal for DC-DC converters and power management systems
• Motor Drivers: Used in motor control circuits for industrial and consumer applications