The FQPF9N50C is a high-performance N-channel MOSFET designed to meet the demanding needs of modern electronic applications. Encased in a TO-220F package, this MOSFET offers exceptional efficiency and power handling, making it an ideal choice for engineers and professionals in the electronics industry. With a current rating of 9A, a voltage capacity of 500V, and a power dissipation of 135W, it provides robust performance for a wide range of high-power applications.
FQPF9N50C TO-220F 9A 500V 135W 0.8Ω N-Channel Mosfet Features
- 1. High Drain Current: Capable of supporting up to 9A continuous drain current, allowing for efficient power control in high-load environments.
- 2. High Breakdown Voltage: With a maximum drain-source voltage of 500V, this MOSFET ensures reliable operation under high-voltage conditions.
- 3. Low On-Resistance: Featuring an on-resistance of 0.8 Ohm, it minimizes power losses and enhances thermal efficiency.
- 4. Power Dissipation: Rated for a maximum power dissipation of 135W, it is perfect for applications requiring high thermal reliability.
- 5. Fast Switching Speed: Designed for rapid switching operations, improving overall system efficiency.
- 6. Enhanced Thermal Performance: The TO-220F package offers excellent heat dissipation for prolonged device lifespan.
- 7. Robust Design: Built to withstand harsh environmental conditions, ensuring durability and long-term performance.
FQPF9N50C TO-220F 9A 500V 135W 0.8Ω N-Channel Mosfet Applications
- 1. Power Supplies: Ideal for use in high-voltage power supply circuits requiring efficient power conversion and management.
- 2. Motor Control: Suitable for controlling motors in industrial and automotive applications, providing precise speed and torque control.
- 3. Inverters: Commonly used in inverter circuits for renewable energy systems, such as solar power inverters, to optimize energy conversion.
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