FQA11N90C TO-3P 11A 900V 300W 1.1Ω N-Channel Mosfet Transistor is a high-performance N-channel power MOSFET designed to meet the demanding needs of modern electronic systems. Leveraging its robust design and high voltage capacity, this component is ideal for high-power applications, ensuring efficiency and reliability in industrial, automotive, and consumer electronics. The integration of the TO-3P package enhances thermal performance, making it a critical choice for engineers seeking optimal power management solutions.
FQA11N90C TO-3P 11A 900V 300W 1.1Ω N-Channel Mosfet Transistor Features
- High Voltage Rating: Capable of withstanding up to 900V, suitable for high-voltage applications.
- Current Capability: Supports continuous current up to 11A, ensuring robust performance under load.
- Power Dissipation: Rated at 300W, offering superior power handling for demanding applications.
- Low On-Resistance: Features an on-resistance of 1.1Ohm, minimizing power losses and enhancing efficiency.
- TO-3P Package: Provides excellent thermal performance and ease of mounting.
- Enhanced Reliability: Designed for long-term reliability in harsh environments.
- Fast Switching Speed: Ensures efficient operation in high-frequency applications.
FQA11N90C TO-3P 11A 900V 300W 1.1Ω N-Channel Mosfet Transistor Applications
- Switching Power Supplies: Ideal for use in high-efficiency power supply designs.
- Motor Control: Suitable for driving motors in automotive and industrial applications.
- Inverter Circuits: Perfect for inverter designs in renewable energy systems and UPS devices.